Volume 1, Issue 1, September 2015, Page: 1-4
Optimum Parameters for Obtaining Polycrystalline Silicon for Photovoltaic Application
B. Zaidi, Laboratoire des Semi-Conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, Annaba, Algérie
C. Shekhar, Department of Applied Physics, Amity University, Gurgaon, India
B. Hadjoudja, Laboratoire des Semi-Conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, Annaba, Algérie
B. Chouial, Laboratoire des Semi-Conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, Annaba, Algérie
A. Chibani, Laboratoire des Semi-Conducteurs, Département de Physique, Faculté des Sciences, Université Badji-Mokhtar, Annaba, Algérie
R. Li, Department of Chemical Engineering, Louisiana State University, LA, USA
M. V. Madhava Rao, Department of Physics, Osmania University, Hyderabad, India
Received: Sep. 15, 2015;       Accepted: Sep. 23, 2015;       Published: Sep. 29, 2015
DOI: 10.11648/j.ajn.20150101.11      View  3974      Downloads  143
Abstract
The cost effective conversion of solar energy into electricity via solar cells remains an ongoing concern of researchers worldwide. The use of polysilicon has been suggested as a possible alternative to achieve this goal. The presence of traps in the grain boundaries having dangling bonds, however, limits the photovoltaic efficiency of solar cells synthesized from polysilicon. The present work constitutes search for optimal processing parameters for the development of polycrystalline silicon solar cells and their large scale manufacturing. The processing parameters depend essentially on the operating temperature, duration of the isothermal heating and the rate of growth of the polysilicon solar cell. These parameter in turn depends highly on the crystallographic states and purity of the material. The optimal processing parameters result in high nucleation rate followed by growth of the silicon grains. This process leads to the crystallization of polysilicon solar cells. In this study the processing parameters for the melting, crystallization and cooling have been optimized. The X-ray diffraction patterns of the samples show the presence of various crystalline phases. The study of crystal orientations by X-ray diffraction patterns shows the crystal orientation along (111), (110) and (100) planes. The (110) and (100) planes are present predominately on the material surface with an advantage for the (110) plane.
Keywords
Polycrystalline Silicon, Nucleation and Growth, Crystallographic Orientation, Solar Cells
To cite this article
B. Zaidi, C. Shekhar, B. Hadjoudja, B. Chouial, A. Chibani, R. Li, M. V. Madhava Rao, Optimum Parameters for Obtaining Polycrystalline Silicon for Photovoltaic Application, American Journal of Nanosciences. Vol. 1, No. 1, 2015, pp. 1-4. doi: 10.11648/j.ajn.20150101.11
Reference
[1]
B. Zaidi, B. Hadjoudja, B. Chouial, S. Gagui, H. Felfli, A. Magramene, A. Chibani; Silicon; 7 (2015) 293–295.
[2]
B. Zaidi, B. Hadjoudja, H. Felfli, B. Chouial, A. Chibani;Revue de Métallurgie; 108 (2011) 443–446.
[3]
B. Zaidi, B. Hadjoudja, B. Chouial, S. Gagui, H. Felfli, A. Chibani; Silicon; 7 (2015) 275–278.
[4]
B. Zaidi, B. Hadjoudja, H. Felfli, A. Chibani; Turk. J. Phys.; 35 (2011) 185–188.
[5]
R. Kishore, J. L. Pastol, G. Revel; Solar Energy Materials; 19 (1987) 221-236.
[6]
A. Eyer, A. Rauber, A. Goetzberger; Optoelec. Devi. Techn.; 5; No 2 (1990) 239-257.
[7]
G. Revel, J. L. Pastol, D. Hania, N. D. Huynh; Revue Phys. Appl.; 22 (1987) 519-528.
[8]
A. Eyer, N. Shillinger, I. Reis, A. Rauber; J. Cryst. Growth; 104 (1990) 119-125.
[9]
P. Gadaud, J. Wopirgard; Revue Phys. Appl.; 23 (1988) 919-924.
[10]
S. Pizzini, D. Narducci, M. Root; Revue Phys. Appl.; 13 (1988) 101-104.
[11]
A. Laugier, J. A. Roger; « Les Photopiles Solaires » (1981).
[12]
P. Andonov, P. Derwin, C. Esling; Revue Phys. Appl.; 22 (1987) 603-612.
[13]
M. Zhu, Y. Cao, X. Guo, J. Liu, M. He, K. Sun; Sol. En. Mat. & Solar Cells; 62 (2000) 109-115.
[14]
S. Mo, E. Peiner, A. Schlachtzki, R. Klockenbrink, E. R. Weber; Mat. Scien. Eng.; B56 (1998) 37-42.
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