Volume 6, Issue 2, June 2020, Page: 14-17
The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures
Mohamed Ahmed Baba, Department of Laser Systems, Institute of Laser, Sudan University of Science and Technology, Khartoum, Sudan; Institute of Frontier and Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China
Ala Gasim Elhag, Department of Physics, University of Science and Technology of China, Hefei, China
Nafie Abdallatief Almuslet, Almogran College of Science and Technology, Khartoum, Sudan
Abdelmoneim Mohamed Awad Elgied, Department of General Science, Karrary University, Omdurman, Sudan
Ahmed Mohamed Salih, Department of Laser Systems, Institute of Laser, Sudan University of Science and Technology, Khartoum, Sudan
Received: May 29, 2020;       Accepted: Jun. 29, 2020;       Published: Jul. 28, 2020
DOI: 10.11648/j.ajn.20200602.12      View  30      Downloads  18
Abstract
Lanthanum titanium oxide thin films are sometimes used in high-temperature environments. Therefore, it is worth paying attention to the thermal stability of the La2Ti2O7 films. La2Ti2O7 target was made through traditional solid-state reaction way to study the effect of substrate temperature on the characteristics of LTO thin films; A Set of lanthanum titanium oxide thin films has been deposited on to Si (100) substrate through Pulsed laser deposition at different annealing temperatures. The results of X-ray diffraction indicated that the prepared LTO thin films at temperatures up to 700°C are amorphous, while the profilometer Dektak-XT conducted to determine the thickness and roughness of La2Ti2O7 films. The obtained result pointed that the thin film thickness decreased by increasing annealing temperature linearly, and the roughness was inversely proportioning to the increasing of substrate temperature. The value of the lowest roughness equal to 12.28 nm for the thinner film with a thickness of 253.46 nm, while the highest roughness was found to be 14.74 nm for the thicker film at 323.05 nm, which were deposited at 700°C and 500°C respectively, therefore it has been remarked that the annealing temperature influenced the morphology, thickness, and roughness of the LTO thin film.
Keywords
La2Ti2O7 Thin Films, PLD, Perovskites, Annealing Temperature
To cite this article
Mohamed Ahmed Baba, Ala Gasim Elhag, Nafie Abdallatief Almuslet, Abdelmoneim Mohamed Awad Elgied, Ahmed Mohamed Salih, The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures, American Journal of Nanosciences. Vol. 6, No. 2, 2020, pp. 14-17. doi: 10.11648/j.ajn.20200602.12
Copyright
Copyright © 2020 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Reference
[1]
Li, C., Khaliq, J., Ning, H., Wei, X., Yan, H., & Reece, M. J. (2015). Study on properties of tantalum-doped La2Ti2O7 ferroelectric ceramics. Journal of Advanced Dielectrics, 5 (01), 1550005.
[2]
Shao, Z., Saitzek, S., Roussel, P., Ferri, A., Bruyer, É., Sayede, A.,... & Desfeux, R. (2011). Microstructure and nanoscale piezoelectric/ferroelectric properties in La2Ti2O7 thin films grown on (110) oriented doped Nb: SrTiO3 substrates. Advanced Engineering Materials, 13 (10), 961-969.
[3]
Gao, Z. P., Yan, H. X., Ning, H. P., Wilson, R., Wei, X. Y., Shi, B.,... & Reece, M. J. (2013). Piezoelectric and dielectric properties of Ce substituted La2Ti2O7 ceramics. Journal of the European Ceramic Society, 33 (5), 1001-1008.
[4]
Main, J. A., Newton, D. V., Massengill, L., & Garcia, E. (1996). Efficient power amplifiers for piezoelectric applications. Smart Materials and Structures, 5 (6), 766.
[5]
Yanez, Y., Garcia-Hernandez, M. J., Salazar, J., Turo, A., & Chavez, J. A. (2005). Designing amplifiers with very low output noise for high impedance piezoelectric transducers. NDT & E International, 38 (6), 491-496.
[6]
Arnau, A. (Ed.). (2004). Piezoelectric transducers and applications (Vol. 2004). Heidelberg: Springer.
[7]
Nechibvute, A., Chawanda, A., & Luhanga, P. (2012). Piezoelectric energy harvesting devices: an alternative energy source for wireless sensors. Smart Materials Research, 2012.
[8]
Nguyen, T. D., & Curry, E. J. (2019, May). Biodegradable Piezoelectric Sensor. In 2019 IEEE 16th International Conference on Wearable and Implantable Body Sensor Networks (BSN) (pp. 1-4). IEEE.
[9]
Dehghannasiri, R., Eftekhar, A. A., & Adibi, A. (2018). Hypersonic surface phononic bandgap demonstration in a CMOS-compatible pillar-based piezoelectric structure on silicon. Physical Review Applied, 10 (6), 064019.
[10]
Cahill, P., Mathewson, A., & Pakrashi, V. (2018). Experimental validation of piezoelectric energy-harvesting device for built infrastructure applications. Journal of Bridge Engineering, 23 (8), 04018056.
[11]
Zhang, F. X., Lian, J., Becker, U., Ewing, R. C., Wang, L. M., Hu, J., & Saxena, S. K. (2007). Structural change of layered perovskite La2Ti2O7 at high pressures. Journal of Solid State Chemistry, 180 (2), 571-576.
[12]
Sayir, A., Farmer, S. C., & Dynys, F. (2012, April). HIGH TEMPERATURE PIEZOELECTRIC La2Ti2O7. In Advances in Electronic and Electrochemical Ceramics: Proceedings of the 107th Annual Meeting of The American Ceramic Society, Baltimore, Maryland, USA 2005 (Vol. 179, p. 57). John Wiley & Sons.
[13]
Kimura, M., Nanamatsu, S., Doi, K., MATSUSHITA, S., Igarashi, S., & TAKAHASHI, M. (1973). New Electrooptic And Piezoelectric Crystal-La2ti2o7. NEC Research & Development, (29), 10-14.
[14]
Todorovsky, D. S., Todorovska, R. V., Milanova, M. M., & Kovacheva, D. G. (2007). Deposition and characterization of La2Ti2O7 thin films via spray pyrolysis process. Applied surface science, 253 (10), 4560-4565.
[15]
Le Paven, C., Lu, Y., Nguyen, H. V., Benzerga, R., Le Gendre, L., Rioual, S.,.. & Delaveaud, C. (2014). Lanthanum titanium perovskite compound: Thin film deposition and high frequency dielectric characterization. Thin Solid Films, 553, 76-80.
[16]
Körner, C. (2016). Additive manufacturing of metallic components by selective electron beam melting—a review. International Materials Reviews, 61 (5), 361-377.
[17]
Gonzalez, A. H. M., Simoes, A. Z., Zaghete, M. A., & Varela, J. A. (2003). Effect of preannealing on the morphology of LiTaO3 thin films prepared from the polymeric precursor method. Materials Characterization, 50 (2-3), 233-238.
[18]
Son, J. W., Orlov, S. S., Phillips, B., & Hesselink, L. (2006). Pulsed laser deposition of single phase LiNbO 3 thin film waveguides. Journal of electroceramics, 17 (2-4), 591-595.
[19]
L. Kerkache., A. Layadi. and A. Mosser; Journal of Alloys and Compounds, 485 (2009) 46-50.
[20]
Julien, C. M., & Mauger, A. (2019). Pulsed Laser Deposited Films for Microbatteries. Coatings, 9 (6), 386.
[21]
Baig, M. K., Atiq, S., Bashir, S., Riaz, S., Naseem, S., Soleimani, H., & Yahya, N. (2016). Pulsed laser deposition of SmCo thin films for MEMS applications. Journal of applied research and technology, 14 (5), 287-292.
[22]
Balachandran, U., & Eror, N. (1989). X-ray diffraction and vibrational-spectroscopy study of the structure of La2Ti2O7. Journal of Materials Research, 4 (6), 1525-1528. doi: 10.1557/JMR.1989.1525.
[23]
Li, J., Yang, W., Su, J., Yang, C., Xu, J., & Wu, S. (2018). Effect of temperature fields on optical properties of La2Ti2O7 thin films. Materials Research Express, 6 (2), 026404.
Browse journals by subject