Volume 6, Issue 2, June 2020, Page: 14-17
The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures
Mohamed Ahmed Baba, Department of Laser Systems, Institute of Laser, Sudan University of Science and Technology, Khartoum, Sudan; Institute of Frontier and Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China
Ala Gasim Elhag, Department of Physics, University of Science and Technology of China, Hefei, China
Nafie Abdallatief Almuslet, Almogran College of Science and Technology, Khartoum, Sudan
Abdelmoneim Mohamed Awad Elgied, Department of General Science, Karrary University, Omdurman, Sudan
Ahmed Mohamed Salih, Department of Laser Systems, Institute of Laser, Sudan University of Science and Technology, Khartoum, Sudan
Received: May 29, 2020;       Accepted: Jun. 29, 2020;       Published: Jul. 28, 2020
DOI: 10.11648/j.ajn.20200602.12      View  30      Downloads  18
Lanthanum titanium oxide thin films are sometimes used in high-temperature environments. Therefore, it is worth paying attention to the thermal stability of the La2Ti2O7 films. La2Ti2O7 target was made through traditional solid-state reaction way to study the effect of substrate temperature on the characteristics of LTO thin films; A Set of lanthanum titanium oxide thin films has been deposited on to Si (100) substrate through Pulsed laser deposition at different annealing temperatures. The results of X-ray diffraction indicated that the prepared LTO thin films at temperatures up to 700°C are amorphous, while the profilometer Dektak-XT conducted to determine the thickness and roughness of La2Ti2O7 films. The obtained result pointed that the thin film thickness decreased by increasing annealing temperature linearly, and the roughness was inversely proportioning to the increasing of substrate temperature. The value of the lowest roughness equal to 12.28 nm for the thinner film with a thickness of 253.46 nm, while the highest roughness was found to be 14.74 nm for the thicker film at 323.05 nm, which were deposited at 700°C and 500°C respectively, therefore it has been remarked that the annealing temperature influenced the morphology, thickness, and roughness of the LTO thin film.
La2Ti2O7 Thin Films, PLD, Perovskites, Annealing Temperature
To cite this article
Mohamed Ahmed Baba, Ala Gasim Elhag, Nafie Abdallatief Almuslet, Abdelmoneim Mohamed Awad Elgied, Ahmed Mohamed Salih, The Characterizations of La2Ti2O7 Thin Films Deposited by Pulsed Laser Deposition at Different Annealing Temperatures, American Journal of Nanosciences. Vol. 6, No. 2, 2020, pp. 14-17. doi: 10.11648/j.ajn.20200602.12
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